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| SPW52N50C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in TO 247 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance VDS @ Tjmax RDS(on) ID 560 0.07 52 P-TO247 V A Type SPW52N50C3 Package P-TO247 Ordering Code Q67040-S4615 Marking 52N50C3 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 C TC = 100 C A 52 30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V I D puls EAS 156 1800 1 20 20 30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25C A V W C VGS Ptot T j , T stg 417 -55... +150 Operating and storage temperature Rev. 2.0 Page 1 2004-03-16 SPW52N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 400 V, ID = 52 A, Tj = 125 C dv/dt 50 V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Symbol min. RthJC RthJA Tsold Values typ. max. 0.3 62 260 - Unit K/W C Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=2700, VGS=VDS VDS=500V, VGS=0V, Tj=25C, Tj=150C Values typ. 600 3 0.5 0.06 0.16 0.7 max. 3.9 500 2.1 - Unit V V(BR)DS VGS=0V, ID=20A A 25 250 100 0.07 nA Gate-source leakage current IGSS VGS=20V, VDS=0V VGS=10V, ID=30A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.0 Page 2 2004-03-16 SPW52N50C3 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol g fs Ciss Coss Crss Conditions min. V DS2*I D*RDS(on)max, ID=30A Values typ. 40 6800 2200 150 212 469 20 30 120 10 max. - Unit S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance, 2) Co(er) energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time V GS=0V, V DS=0V to 400V pF td(on) tr td(off) tf V DD=380V, V GS=0/10V, ID=52A, RG =1.8 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=380V, ID=52A - 30 160 290 5 - nC VDD=380V, ID=52A, VGS=0 to 10V V(plateau) VDD=380V, ID=52A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.0 Page 3 2004-03-16 SPW52N50C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt VGS=0V, IF=IS VR=380V, IF=IS , diF/dt=100A/s Symbol IS ISM Conditions min. TC=25C Values typ. 1 580 20 70 900 max. 52 156 1.2 - Unit A V ns C A A/s Typical Transient Thermal Characteristics Symbol Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.002689 0.005407 0.011 0.054 0.071 0.036 K/W Value typ. Unit Symbol Value typ. Unit Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.001081 0.004021 0.005415 0.014 0.025 0.158 Ws/K Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Rev. 2.0 Page 4 2004-03-16 SPW52N50C3 1 Power dissipation Ptot = f (TC) 500 SPW52N50C3 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25C 10 3 W 400 350 A 10 2 Ptot ID 300 250 200 150 100 50 0 0 10 1 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 20 40 60 80 100 120 C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 0 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 280 20V K/W A 10 -1 7.5V ZthJC 200 ID 7V 160 10 -2 6.5V 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 120 6V 80 5.5V 40 5V 4.5V 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 0 0 4 8 12 16 20 26 V VDS Rev. 2.0 Page 5 2004-03-16 SPW52N50C3 5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 160 20V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS 0.5 A 6.5V 4V 4.5V 5V 5.5V 6V 6.5V ID 100 6V RDS(on) 120 0.4 0.35 80 5.5V 0.3 60 5V 0.25 40 4.5V 0.2 20V 20 4V 0.15 0 0 4 8 12 16 20 26 V VDS 0.1 0 20 40 60 80 100 120 A 160 ID 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 30 A, VGS = 10 V 0.38 SPW52N50C3 8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 280 A 0.32 25C RDS(on) 0.28 200 ID 160 120 150C 0.24 0.2 0.16 0.12 0.08 0.04 0 -60 98% typ 80 40 -20 20 60 100 C 180 0 0 1 2 3 4 5 6 7 8 Tj V 10 VGS Rev. 2.0 Page 6 2004-03-16 SPW52N50C3 9 Typ. gate charge VGS = f (QGate) 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 3 SPW52N50C3 parameter: ID = 52 A pulsed 16 V SPW52N50C3 A 12 VGS 0.8 VDS max 8 6 IF 10 1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 10 0.2 VDS max 10 2 4 2 0 0 40 80 120 160 200 240 280 320 360nC 420 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 20 12 Avalanche energy EAS = f (Tj) par.: ID = 10 A, VDD = 50 V 2 A 16 14 mJ EAS Tj (START)=25C IAR 12 10 8 6 4 2 0 -3 10 -2 -1 0 1 2 4 1 Tj(START)=125C 0.5 10 10 10 10 10 s 10 tAR 0 20 40 60 80 100 120 160 C Tj Rev. 2.0 Page 7 2004-03-16 SPW52N50C3 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) 600 SPW52N50C3 14 Avalanche power losses PAR = f (f ) parameter: E AR=1mJ 1000 V 800 700 600 500 400 300 200 100 04 10 5 6 V(BR)DSS 570 560 550 540 530 520 510 500 490 480 470 460 450 -60 -20 20 60 100 C PAV 180 10 Hz f 10 Tj 15 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 5 16 Typ. Coss stored energy Eoss=f(VDS) 24 pF Ciss J 20 18 10 4 Eoss 10 3 16 14 C Coss 12 10 8 10 2 Crss 6 4 2 10 1 0 100 200 300 400 V 600 0 0 100 200 300 V 500 VDS VDS Rev. 2.0 Page 8 2004-03-16 SPW52N50C3 Definition of diodes switching characteristics Rev. 2.0 Page 9 2004-03-16 SPW52N50C3 P-TO-247-3-1 15.9 6.35 o3.61 5.03 2.03 4.37 20.9 9.91 6.17 D 7 D 1.75 1.14 0.243 1.2 2 2.92 5.46 16 0.762 MAX. 2.4 +0.05 General tolerance unless otherwise specified: Leadframe parts: 0.05 Package parts: 0.12 Rev. 2.0 41.22 2.97 x 0.127 5 5.94 20 Page 10 2004-03-16 SPW52N50C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 Page 11 2004-03-16 |
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